o:29963 Radiation Damage in Electronic Memory Devices en Abstract: This paper investigates the behavior of semiconductor memories exposed to radiation in order to establish their applicability in a radiation environment.The experimental procedure has been used to test radiation hardness of commercial semiconductor memories. Different types of memory chips have been exposed to indirect ionizing radiation by changing radiation dose intensity.The effect of direct ionizing radiation on semiconductor memory behavior has been analyzed by using Monte Carlo simulation method. Obtained results show that gamma radiation causes decrease in threshold voltage, being proportional to the absorbed dose of radiation. Monte Carlo simulations of radiation interaction with material proved to be significant and can be a good estimation tool in probing semiconductor memory behavior in radiation environment. 1552099 10.1155/2013/170269 1552101 1110-662X 2023-06-02T12:02:51.710Z 44 no 46 Irfan S. Fetahović Državni univerzitet u Novom Pazaru 94595849 0000-0001-5788-1273 Milić Pejović person 0000-0002-6290-4203 Miloš Vujisić person 0000-0001-5929-411X application/pdf 1915703 https://phaidrabg.bg.ac.rs/o:29963 no yes 16 70 92000001 20A01 International Journal of Photoenergy 2013 2013